Drawing graphene nanoribbons on SiC by ion implantation
Cover Image Feb13th Applied Physics Letters
The most downloaded article in Feb 2012 and 3rd downloaded article in March 2012
We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC.... more We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 degrees C below the graphitization temperature (T-G) of SiC. We find that ion implantation of SiC lowers the T-G, allowing selective graphene growth at temperatures below the T-G of pristine SiC and above T-G of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing. (C) 2012 American Institute of Physics. [doi:10.1063/1.3682479]
Is the electron's charge 2e? A problem of the de Broglie-Bohm theory
by Shan Gao
It is shown that the de Broglie-Bohm theory has a potential problem concerning the charge distribution of a quantum... more It is shown that the de Broglie-Bohm theory has a potential problem concerning the charge distribution of a quantum system such as an electron. According to the guidance equation of the theory, the electron's charge is localized in a position where its Bohmian particle is. But according to the Schrödinger equation of the theory, the electron's charge is not localized in one position but distributed throughout space, and the charge density in each position is proportional to the modulus square of the wave function of the electron there. Although this tension may be resolved by assuming that the electron's charge is not e but 2e, one for its Bohmian particle and the other for its wave function, the resolution will introduce more serious problems.
Physically Accessing Your Apartment with Skype
published in 2600: The Hacker Quarterly (Winter 2005-2006, Vol. 22, No. 4)
I live in one of those apartment buildings that has a callbox for entry. You know, one of those systems with a tenant... more
I live in one of those apartment buildings that has a callbox for entry. You know, one of those systems with a tenant directory that calls the tenant and lets them you in by pressing a key on their phone. My box has no code for entry, so the metallic key is the only approved way to get in.
I also misplace my keys quite a bit. So, I had this great idea. Why not have my voicemail message buzz me in?
LEDs Brancos Sem Fio
In Wireless Brasil < http://www.wirelessbrasil.org >
This paper describes the new tecnology of White-LED, that is sitll not well known to the general public. At first, the... more This paper describes the new tecnology of White-LED, that is sitll not well known to the general public. At first, the concept of wireless network and optic wireless will be shown. Then, how this new tecnology works, as well as its pros and contras. At last, its importance and future expectations will be presented.
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Seen by: and 3 moreIrrigation Management Transfer
Irrigation Management Transfer
Irrigation Management Transfer Irrigation Management Transfer
CFP - International Journal of Engineering (IJE)
by J. Stewart
Computer Science Journals (CSC Journals)
Computer Science Journals (CSC Journals) invites researchers, editors, scientists & scholars to publish their... more
Computer Science Journals (CSC Journals) invites researchers, editors, scientists & scholars to publish their scientific research papers in an International Journal of Engineering (IJE) Volume 6, Issue 3.
International Journal of Engineering (IJE) is devoted in assimilating publications that document development and research results within the broad spectrum of subfields in the engineering sciences. The journal intends to disseminate knowledge in the various disciplines of the engineering field from theoretical, practical and analytical research to physical implications and theoretical or quantitative discussion intended for both academic and industrial progress.
Our intended audiences comprises of scientists, researchers, mathematicians, practicing engineers, among others working in Engineering and welcome them to exchange and share their expertise in their particular disciplines. We also encourage articles, interdisciplinary in nature.
CSC Journals anticipate and invite papers on any of the following topics:
Aerospace Engineering
Agricultural Engineering
Biomedical Engineering
Chemical Engineering
Civil & Structural Engineering
Computer Engineering
Control Systems Engineering
Education Engineering
Electrical Engineering
Electronic Engineering
Engineering Mathematics
Engineering Science
Environmental Engineering
Fluid Engineering
Geotechnical Engineering
Industrial Engineering
Manufacturing Engineering
Materials & Technology Engineering
Mechanical Engineering
Mineral & Mining Engineering
Nuclear Engineering
Optical Engineering
Petroleum Engineering
Robotics & Automation Engineering
Telecommunications Engineering
Important Dates - IJE CFP - Volume 6, Issue 3.
Paper Submission: March 31, 2012
Author Notification: May 15, 2012
Issue Publication: June 2012
For complete details about IJE archives publications, abstracting/indexing, editorial board and other important information, please refer to IJE homepage.
We look forward to receive your valuable papers. If you have further questions please do not hesitate to contact us at cscpress@cscjournals.org. Our team is committed to provide a quick and supportive service throughout the publication process.
A complete list of journals can be found at http://www.cscjournals.org/csc/bysubject.php
Arsenic Dopant Influence upon the Sintering Behavior of the Aluminum‐Polysilicon Interface
REF: J. Electrochem. Soc., Volume 131, Issue 3, pp. 645-652 (1984)
(Issue Date: March 1984).
AUTHORS Nicole Herbots, Fernand Van de Wiele, and Maurice Lobet
Laboratoire de Microelectronique, Universite Catholique de Louvain, Louvain-la-Neuve, Belgium
Robert G. Elliman
Department of Communication and Electronic Engineering, Royal Melbourne Institute of Technology, Melbourne, Australia
Interdiffusion between thin films of aluminum (Al) and polycrystalline silicon (poly-Si) has been studied with the... more Interdiffusion between thin films of aluminum (Al) and polycrystalline silicon (poly-Si) has been studied with the purposeof obtaining a stable interface upon sintering for IC metallization. The solid-phase crystal regrowth of Si due to this lowtemperature interdiffusion has also been investigated. Dopant segregation towards the interfaces and the grain boundariesof arsenic-implanted poly-Si was used successfully to control the kinetics of Al-poly-Si interactions. The correlation betweenthe arsenic depth profiles, the Si-layer microstructure, and the sintering behavior of the Al-poly-Si interface wasmeasured by RBS, (scanning) AES, SEM, TEM, and grazing incidence x-rays. Quantitative results and discussion of thediffusion mechanisms at work are presented. It is shown that the presence of an arsenic segregation peak on top of thepoly-Si layer stabilizes Al/poly-Si interface. A concentration of 1019 atom/cm3 appears to be a minimum threshold forsintering at 465°C.
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Seen by:Ad-Hoc Networks as Complex Systems
Many algorithms routinely employed in fixed networks have poor performance in ad-hoc networks, and thus there has been... more Many algorithms routinely employed in fixed networks have poor performance in ad-hoc networks, and thus there has been a need to develop new paradigms to meet the demands imposed by restrictions such as mobility, limited battery power, and limited bandwidth, among others. An ad-hoc network can be seen as a complex system with local coupling and mobility, and thus many emergent properties and structures that have been studied in other types of complex systems can be designed or induced in ad-hoc networks in order to improve their performance. In this paper we present a review of several examples that show how emergent properties and self-organization mechanisms can be incorporated into ad-hoc networks.
Evolution of Telecom Operator Software Industry: Conclusions and Future
Tyrväinen, P., Evolution of Telecom Operator Software Industry: Conclusions and Future, in Tyrväinen, P., Mazhelis, O. (Eds.), Vertical Software Industry Evolution - Analysis of Telecom Operator Software Springer, Contributions to Management Science. 2009, pp 139-143.
Survey of Robustness Enhancement Techniques for Wireless Systems-on-a-Chip and Study of Temperature as Observable for Process Variations
by Didac Gómez
Marvin Onabajo1, Didac Gómez2, Eduardo Aldrete-Vidrio2, Josep Altet2,
Diego Mateo2, and Jose Silva-Martinez1
1 Department of Electrical & Computer Eng., Texas A&M University,
2 Department of Electronic Engineering, Universitat Politècnica de Catalunya,
Journal of Electronic Testing: Theory and Applications (JETTA)
Built-in test and on-chip calibration features are becoming essential for reliable wireless connectivity of next... more Built-in test and on-chip calibration features are becoming essential for reliable wireless connectivity of next generation devices suffering from increasing process variations in CMOS technologies. This paper contains an overview of contemporary self-test and performance enhancement strategies for single-chip transceivers. In general, a trend has emerged to combine several techniques involving process variability monitoring, digital calibration, and tuning of analog circuits. Special attention is directed towards the investigation of temperature as an observable for process variations, given that thermal coupling through the silicon substrate has recently been demonstrated as mechanism to monitor the performances of analog circuits. Both Monte Carlo simulations and experimental results are presented in this paper to show that circuit-level specifications exhibit correlations with silicon surface temperature changes. Since temperature changes can be measured with efficient on-chip differential temperature sensors, a conceptual outline is given for the use of temperature sensors as alternative process variation monitors.
Process and Temperature Compensation for RF Low-Noise Amplifiers and Mixers
by Didac Gómez
Didac Gómez, Milosz Sroka, and José Luis González Jiménez,Circuits and Systems I: Regular Papers, IEEE Transactions on
Temperature and process variations have become key issues in the design of integrated circuits using deep submicron... more Temperature and process variations have become key issues in the design of integrated circuits using deep submicron technologies. In RF front-end circuitry, many characteristics must be compensated in order to maintain acceptable performance across all process corners and throughout the temperature range. This paper proposes a new technique consisting of a compensation circuit that adapts and generates the appropriate bias voltage for LNAs and mixers so that the variability with temperature and process corners of their main performance metrics (S-parameters, gain, noise figure, etc.) is minimized.
Exploiting CMOS short-channel effects for yield enhancement in analogue/RF design
by Didac Gómez
D. Gómez and D. Mateo;ELECTRONICS LETTERS 15th April 2010 Vol. 46 No. 8
The use of CMOS short-channel effects for yield enhancement in analogue design is presented. Analytical and simulation... more The use of CMOS short-channel effects for yield enhancement in analogue design is presented. Analytical and simulation results show the effectiveness of this technique applied on a 2.4 GHz CMOS LNA designed in a 65nm CMOS technology. The trade-off between yield and power consumption is discussed and a low power current-reuse alternative is presented.
On Evaluating Temperature as Observable for CMOS Technology Variability
by Didac Gómez
VARI 2010 Workshop ; J. Altet, D. Gomez, C. Dufis, J.L. Gonzalez, D. Mateo, X. Aragones, F. Moll and A. Rubio
The temperature at surface of a silicon die depends on the activity of the circuits placed on it. In this paper, it is... more The temperature at surface of a silicon die depends on the activity of the circuits placed on it. In this paper, it is analyzed how Process, Voltage and Temperature (PVT) variations affect simultaneously some figures of merit (FoM) of some digital and analog circuits and the power dissipated by such circuits. It is shown that in some cases, a strong correlation exists between the variation of the circuit FoM and the variation of the dissipated power. Since local temperature increase at the silicon surface close to the circuit linearly depends on dissipated power, the results show that temperature can be considered as an observable magnitude for CMOS technology variability monitoring.
A 75 pJ/bit All-Digital Quadrature Coherent IR-UWB Transceiver in 0.18μm CMOS
by Didac Gómez
E.Barajas,D. Gómez, D. Mateo, J. L. González, RFIC 2010 symposium
In this paper a 75 pJ/b all-digital quadrature coherent impulse radio ultra-wideband transceiver in 0.18μm CMOS is... more
In this paper a 75 pJ/b all-digital quadrature coherent impulse radio ultra-wideband transceiver in 0.18μm CMOS is presented. It consumes 42 mW operating at a 560 Mbps datarate.
The receiver and transmitter share most of the components reducing the area. This design is optimal for low-power low-cost short-range high-speed communications.
Electro-thermal coupling analysis methodology for RF circuits
by Didac Gómez
Dídac Gómez, Diego Mateo and Josep Altet; IEEE 16th International Workshop on Thermal investigations of ICs and Systems
In this paper we present a methodology of electro-thermal coupling simulation for RF circuits. The proposed... more In this paper we present a methodology of electro-thermal coupling simulation for RF circuits. The proposed methodology take advantage of well stablished tools for frequency translating circuits in order to reduce significantly the computational resources needed when frequencies of interest are separated orders of magnitude.
A low-power RF front-end for 2.5 GHz receivers
by Didac Gómez
Moreno, L. Gomez, D. Gonzalez, J.L. Mateo, D. Aragones, X. Berenguer, R. Solar, H. ;Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
This paper presents a low power and low cost front end for a direct conversion 2.5 GHz ISM band receiver composed of a... more This paper presents a low power and low cost front end for a direct conversion 2.5 GHz ISM band receiver composed of a 16 kV HBM ESD protected LNA, differential Gilbert-cell mixers, and high-pass filters for DC offset cancellation. The whole front-end is implemented in a 2P6M 0.18 mum RFCMOS process. It exhibits a voltage gain of 24dB and a SSB noise figure of 8.4 dB which make it suitable for most of the 2.5 GHz wireless short-range communication transceivers. The achieved power consumption is only 1.06 mW from a 1.2V power supply.

